Initiating and monitoring the evolution of single electrons within atom-defined structures
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United States of America Patent
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Jun 29, 2021
Grant Date -
Aug 6, 2020
app pub date -
Sep 28, 2018
filing date -
Sep 28, 2017
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Abstract
A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.
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