Tungsten silicide target and method of manufacturing same

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United States of America Patent

PATENT NO 11046616
APP PUB NO 20200071232A1
SERIAL NO

16493006

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Abstract

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A tungsten silicide target capable of suppressing the occurrence of particles during sputtering is provided by a method different from conventional methods. The tungsten silicide target includes not more than 5 low-density semi-sintered portions having a size of 50 μm or more per 80000 mm2 on the sputtering surface.

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Patent Owner(s)

Patent OwnerAddress
JX NIPPON MINING & METALS CORPORATION1-2 OTEMACHI 1-CHOME CHIYODA-KU TOKYO 1008164

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asano, Takayuki Ibaraki, JP 14 63
Oda, Kunihiro Ibaraki, JP 32 319

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