Scan and corrector magnet designs for high throughput scanned beam ion implanter
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United States of America Patent
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Jun 15, 2021
Grant Date -
Jun 18, 2020
app pub date -
Dec 19, 2019
filing date -
Dec 13, 2018
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Abstract
An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.
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