Optical semiconductor element comprising n-type algan graded layer

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United States of America Patent

PATENT NO 11031522
APP PUB NO 20190189834A1
SERIAL NO

16213287

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An optical semiconductor element comprises: an AlN substrate; an n-type semiconductor layer composed of an AlGaN layer, the AlGaN layer being grown on the AlN substrate and being pseudomorphic with the AlN substrate, an Al composition or the AlGaN layer being reduced with an increase in distance from the AlN substrate; an active layer which is grown on the n-type semiconductor layer; and a p-type semiconductor layer which is grown on the active layer.

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Patent Owner(s)

Patent OwnerAddress
STANLEY ELECTRIC CO LTD2-9-13 NAKAMEGURO MEGURO-KU TOKYO 1538636 ?1538636

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Inventor Name Address # of filed Patents Total Citations
Kinoshita, Toru Tokyo, JP 28 252

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