Chromeless phase shift mask structure and process

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United States of America Patent

PATENT NO 11022874
APP PUB NO 20190377255A1
SERIAL NO

16548273

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Abstract

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The present disclosure provides a mask. The mask includes a substrate; an etch stop layer disposed on the substrate, wherein the etch stop layer includes at least one of ruthenium oxide, tungsten nitride, and titanium nitride and is doped with at least one of phosphorous (P), calcium (Ca), and sodium (Na); and a material layer disposed on the etch stop layer and patterned to have an opening, wherein the etch stop layer completely covers a portion of the substrate within the opening.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Hsin-Chang Hsinchu County, TW 203 1090
Lin, Yun-Yue Hsinchu, TW 77 363

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