Semiconductor structure having a conductive bump with a plurality of bump segments
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United States of America Patent
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May 25, 2021
Grant Date -
May 26, 2016
app pub date -
Nov 26, 2014
filing date -
Nov 26, 2014
priority date (Note) -
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a semiconductor chip; a substrate facing an active surface of the semiconductor chip; and a conductive bump extending from the active surface of the semiconductor chip toward the substrate, wherein the conductive bump comprises: a plurality of bump segments comprising a first group of bump segments and a second group of bump segments, wherein each bump segment comprises the same segment height in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment comprises a volume defined by the multiplication of the segment height with the average cross-sectional area of the bump segment; wherein the ratio of the total volume of the first group of bump segments to the total volume of the second group of bump segments is between about 0.03 and about 0.8.
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