Semiconductor device convex source/drain region
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United States of America Patent
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May 11, 2021
Grant Date -
Apr 9, 2020
app pub date -
Dec 11, 2019
filing date -
Jun 26, 2018
priority date (Note) -
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Abstract
The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device is provided. The method generally includes forming a recess in a fin, the fin being on a substrate. The recess is proximate a gate structure over the fin. The method includes epitaxially growing a source/drain region in the recess using a remote plasma chemical vapor deposition (RPCVD) process. The RPCVD process includes using a silicon source precursor and a hydrogen carrier gas.
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