Fabrication method of semiconductor device having SIGe shell channel and semiconductor device fabricated by the same
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United States of America
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Apr 27, 2021
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Nov 27, 2019
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Nov 27, 2019
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Abstract
A method for fabricating a semiconductor device is carried out so that silicon nanowires may be made of vertically stacked one or more floating silicon layers, and a silicon buffer layer may be surrounded on each surface of the silicon nanowires with a sufficient thickness, e.g., close to the diameter of the nanowire, and then a silicon germanium shell may be formed on it. Thus, a semiconductor device having a silicon germanium shell channel structure can be fabricated with a uniform thickness even on a bulk silicon substrate using a conventional silicon CMOS process.
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