Tungsten post-CMP cleaning composition
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United States of America
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Apr 27, 2021
Grant Date -
Jun 13, 2019
app pub date -
Mar 9, 2017
filing date -
Mar 9, 2017
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Abstract
A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
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