Depassivation lithography by scanning tunneling microscopy
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United States of America
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Apr 20, 2021
Grant Date -
Apr 30, 2020
app pub date -
Oct 22, 2019
filing date -
Oct 22, 2019
priority date (Note) -
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Abstract
Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) system to receive a sample having a surface to be patterned. The system positions a conductive tip over a pixel region of the surface. While the conductive tip remains laterally fixed relative to the surface, the system applies a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region. The system stops applying the voltage and current when it senses the removal of the at least one atom. The system then verifies that the at least one atom has been removed from the pixel region.
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