Silicon monocrystal production method

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United States of America

PATENT NO 10982350
APP PUB NO 20190186042A1
SERIAL NO

16311493

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Abstract

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A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. In forming the shoulder, the shoulder is formed such that a part of growth striations, which extend radially across the shoulder, has an outer end interrupted by another part of the growth striations not to reach a peripheral portion of the shoulder and that no remelt growth area with a height of 200 μm or more in a growth direction is generated.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1058634 ?1058634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kubota, Toshimichi Tokyo, JP 38 306
Narushima, Yasuhito Tokyo, JP 41 147

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