MEMS devices and methods of forming the same

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United States of America

PATENT NO 10981779
APP PUB NO 20180194618A1
SERIAL NO

15910647

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Abstract

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A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 SCIENCE BASED INDUSTRIAL PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Kai-Fung Taipei, TW 34 105
Leu, Len-Yi Hsinchu, TW 18 131
Tsai, Lien-Yao Hsinchu, TW 19 81

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1445612453334991910216201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 80010002000300040005000600070008000900010000110001200013000140001500016000

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