Magnetoresistive stacks and methods therefor
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United States of America
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Jan 11, 2019
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Jan 11, 2019
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Abstract
A magnetoresistive device may include multiple magnetic tunnel junction (MTJ) stacks separated from each other by one or more dielectric material layers and electrically conductive vias extending through the one more dielectric material layers. Each MTJ stack may include multiple MTJ bits arranged one on top of another and the electrically conductive vias may be configured to electrically access each MTJ bit of the multiple MTJ stacks.
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