SiC single crystal production method and production apparatus
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United States of America
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Apr 5, 2018
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Apr 5, 2018
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Abstract
A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.
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