Integrated circuit devices and method of manufacturing the same
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United States of America Patent
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Mar 16, 2021
Grant Date -
Aug 20, 2020
app pub date -
May 7, 2020
filing date -
May 23, 2018
priority date (Note) -
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Abstract
An integrated circuit device includes a fin-type active region extending on a substrate in a first direction parallel to a top surface of the substrate; a gate structure extending on the fin-type active region and extending in a second direction parallel to the top surface of the substrate and different from the first direction; and source/drain regions in a recess region extending from one side of the gate structure into the fin-type active region, the source/drain regions including an upper semiconductor layer on an inner wall of the recess region, having a first impurity concentration, and including a gap; and a gap-fill semiconductor layer, which fills the gap and has a second impurity concentration that is greater than the first impurity concentration.
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