Artificial neuron apparatus
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United States of America Patent
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Mar 16, 2021
Grant Date -
Sep 26, 2019
app pub date -
Jun 9, 2019
filing date -
Jun 17, 2015
priority date (Note) -
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Abstract
A resistive memory cell is connected in circuitry which has a first input terminal for applying neuron input signals including a read portion and a write portion. The circuitry includes a read circuit producing a read signal dependent on resistance of the memory cell, and an output terminal providing a neuron output signal, dependent on the read signal in a first state of the memory cell. The circuitry also includes a storage circuit storing a measurement signal dependent on the read signal, and a switch set operable to supply the read signal to the storage circuit during application of the read portion of each neuron input signal to the memory cell, and, after application of the read portion, to apply the measurement signal in the apparatus to enable resetting of the memory cell to a second state.
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