Spin orbit torque magnetic random access memory structures and methods for fabrication

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United States of America Patent

PATENT NO 10943951
APP PUB NO 20190305042A1
SERIAL NO

16374410

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Abstract

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In one example embodiment, a SOT-MRAM includes a storage unit having a CoαXβPtγ based free layer. The storage unit includes a bottom electrode and the CoαXβPtγ based free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoαXβPtγ based free layer, and a fixed layer over the tunnel barrier layer. The CoαXβPtγ based free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL UNIVERSITY OF SINGAPORESINGAPORE 119077

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jingsheng Singapore, SG 15 137
Deng, Jinyu Singapore, SG 2 11
Liu, Liang Singapore, SG 768 9740

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