Vertical field effect transistors

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United States of America Patent

PATENT NO 10943831
SERIAL NO

16679506

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Abstract

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Vertical field effect transistors (FETs) with minimum pitch and methods of manufacture are disclosed. The structure includes at least one vertical fin structure and gate material contacting with the at least one vertical fin structure. The structure further includes metal material in electrical contact with the ends of the at least one vertical fin.

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Patent Owner(s)

  • IBM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anderson, Brent A Jericho, US 612 6970
Nowak, Edward J Essex Junction, US 636 15371

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