Etching composition additive, method for preparing the same and etching composition comprising the same
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United States of America Patent
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Apr 30, 2020
Grant Date -
Apr 30, 2020
app pub date -
Oct 7, 2019
filing date -
Oct 25, 2018
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Abstract
An etching composition providing a high selection ratio enabling selective removal of a nitride film and minimization of an etching rate, a preparation method thereof, an etching composition additive prepared through a reaction of phosphoric anhydride and a silane compound represented by Formula 1 below, a method for preparing the same and an etching composition including the same are provided:
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