Vertical-side solder method and package for power GaN devices
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United States of America Patent
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Mar 2, 2021
Grant Date -
Aug 8, 2019
app pub date -
Jan 22, 2019
filing date -
Feb 3, 2018
priority date (Note) -
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Abstract
A packaged GaN semiconductor device with improved heat dissipation is provided. A GaN device is packaged on a printed circuit board (PCB) with a vertical side of the device, and optionally the back side of the device, in thermal contact with the PCB. The packaging is compatible with surface mount technologies such as land grid array (LGA), ball grid array (BGA), and other formats. Thermal contact between the PCB and a vertical side of the device, and optionally the back side of the device, is made through solder. The solder used for the thermal contact may also connect a source terminal of the device, which also improves electrical stability of the device. The packaging is particularly suitable for GaN HEMT devices.
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