Nitride semiconductor element, nitride semiconductor light emitting element, ultraviolet light emitting element
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United States of America Patent
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Mar 2, 2021
Grant Date -
May 9, 2019
app pub date -
Nov 8, 2018
filing date -
Nov 9, 2017
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Abstract
To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.
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