Method for reduction of interfacial stress accumulation between double side copper-plated layers and aluminum nitride substrate
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United States of America Patent
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Feb 16, 2021
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Oct 25, 2019
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Nov 14, 2018
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Abstract
The present invention uses a photolithography process and an electroplating process to perform. TAV copper filling and patterning of the fabrication of the double side copper-plated layers to plate the double side copper-plated layers in advance at the TAV through holes to serve as a stress buffer layer of the aluminum nitride substrates. Then the subsequent pattern designs of the copper-plated layers are customized. According to the simulation theory calculations, it is proved that the stress which accumulates on the short-side of the copper-plated layer of the aluminum nitride substrate with the asymmetric structure may be effectively reduced to facilitate the improvement of the reliability of the aluminum nitride substrate.
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