Floating body memory cell having gates favoring different conductivity type regions

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United States of America Patent

PATENT NO 10916547
APP PUB NO 20200312854A1
SERIAL NO

16900359

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Abstract

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A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATIONSANTA CLARA CA 95052

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Avci, Uygar E Portland, US 161 1262
Ban, Ibrahim Beaverton, US 43 600
Chang, Peter L D Portland, US 48 1038
Kencke, David Beaverton, US 15 158

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