Paste composition and method for forming silicon germanium layer

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United States of America Patent

PATENT NO 10916423
APP PUB NO 20180301334A1
SERIAL NO

15762321

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Abstract

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This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

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Patent Owner(s)

Patent OwnerAddress
TOYO ALUMINIUM KABUSHIKI KAISHA6-8 KYUTARO-MACHI 3-CHOME CHUO-KU OSAKA-SHI OSAKA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dhamrin, Marwan Osaka, JP 7 3
Kikuchi, Ken Osaka, JP 171 2070
Morishita, Naoya Osaka, JP 3 4
Nakahara, Masahiro Osaka, JP 11 247
Suzuki, Shota Osaka, JP 116 269

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