Polycrystalline silicon rod and method for producing single crystal silicon
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United States of America Patent
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Feb 9, 2021
Grant Date -
Apr 25, 2019
app pub date -
Oct 16, 2018
filing date -
Oct 20, 2017
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Abstract
The present invention provides polycrystalline silicon suitably used as a raw material for producing single crystal silicon. The polycrystalline silicon rod of the present invention is a polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 10 μm is not observed.
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