High power radio frequency switches with low leakage current and low insertion loss

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United States of America Patent

PATENT NO 10911040
APP PUB NO 20200343884A1
SERIAL NO

16532932

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Abstract

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High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of transistors and is configured to selectively connect one of a transmit path or a receive path to an antenna. All of the transistors are configured to be in an on state when the RF switch operates in a high power mode and all of the transistors are configured to be in an off state when the RF switch operates in a low power mode.

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Patent Owner(s)

Patent OwnerAddress
ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANYBAY F1 RAHEEN INDUSTRIAL ESTATE LIMERICK

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Atesal, Yusuf Istanbul, TR 4 6
Celik, Abdullah Istanbul, TR 6 21

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