Device with large EPI in FinFETs and method of manufacturing

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United States of America Patent

PATENT NO 10910471
SERIAL NO

16032878

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Abstract

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A method of forming a logic or memory cell with an epi-RSD width of larger than 1.3× fin pitch and the resulting device are provided. Embodiments include a device including a RSD region formed on each of a plurality of fins over a substrate, wherein the RSD has a width larger than 1.3× fin pitch, a TS formed on the RSD, and an ILD formed over the TS.

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Patent Owner(s)

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GLOBALFOUNDRIES U S INC2600 GREAT AMERICA WAY SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lim, Sang Woo Ballston Spa, US 8 16
Liu, Huang Mechanicville, US 123 799
Liu, Jinping Ballston Lake, US 60 134
Peng, Jianwei Latham, US 45 231
Stoker, Matthew Wahlquist Ballston Lake, US 1 0

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