Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch
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United States of America Patent
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Feb 2, 2021
Grant Date -
May 16, 2019
app pub date -
Apr 9, 2018
filing date -
Nov 16, 2017
priority date (Note) -
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Abstract
An integrated circuit including a series of field effect transistors. Each field effect transistor includes a source region, a drain region, a channel region extending between the source region and the drain region, a gate on the channel region, a gate contact on the gate at an active region of the gate, a source contact on the source region, and a drain contact on the drain region. Upper surfaces of the source and drain contacts are spaced below an upper surface of the gate by a depth.
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