Variable resistance memory devices
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United States of America Patent
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Feb 2, 2021
Grant Date -
Jul 30, 2020
app pub date -
Sep 4, 2019
filing date -
Jan 25, 2019
priority date (Note) -
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Abstract
A variable resistance memory device includes a memory unit including a first electrode, a variable resistance pattern and a second electrode sequentially stacked on a substrate, a first selection structure on the memory unit, a third electrode structure on the first selection structure, and an anti-fuse including a fourth electrode, a second selection structure and a fifth electrode structure sequentially stacked. The fourth electrode directly contacts the second selection structure, and a bottom of the fourth electrode is lower than a bottom of the second electrode.
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