Integrated trench capacitor
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United States of America Patent
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Jan 26, 2021
Grant Date -
Feb 14, 2019
app pub date -
Oct 18, 2018
filing date -
Sep 13, 2016
priority date (Note) -
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Abstract
Embodiments of a deep trench capacitor are disclosed. In one example a plurality of deep trenches is located in a first region of a semiconductor wafer, the first region having a first conductivity type. A corresponding dielectric layer is located on a surface of each of the plurality of deep trenches, and a corresponding doped polysilicon filler is located within each of the dielectric layers. Dielectric-filled trenches are located between each of the dielectric layers and the surface of the semiconductor wafer.
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