Method for producing silicon single crystal

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United States of America Patent

PATENT NO 10895018
APP PUB NO 20190249331A1
SERIAL NO

16310232

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Abstract

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A production method of a monocrystalline silicon includes: forming a shoulder of the monocrystalline silicon; and forming a straight body of the monocrystalline silicon. To form the shoulder, a crucible is heated such that a heating ratio, which is calculated by dividing a volume of heat from a lower heater by a volume of heat from an upper heater, increases from a predetermined value of 1 or more.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1058634 ?1058634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kubota, Toshimichi Tokyo, JP 38 306
Narushima, Yasuhito Tokyo, JP 41 147

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