Fullerene derivative and n-type semiconductor material

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United States of America Patent

PATENT NO 10894770
APP PUB NO 20180282274A1
SERIAL NO

15766148

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Abstract

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An object of the present invention is to provide a novel fullerene derivative usable in n-type semiconductor materials for organic thin-film solar cells and the like. The object is achieved by a fullerene derivative represented by formula (1)

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Patent Owner(s)

  • DAIKIN INDUSTRIES, LTD.; OSAKA UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adachi, Kenji Osaka, JP 96 625
Aso, Yoshio Osaka, JP 35 153
Ie, Yutaka Osaka, JP 21 36
Karakawa, Makoto Osaka, JP 4 6
Nagai, Takabumi Osaka, JP 14 37

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