Thermoelectric material, method of fabricating the same, and thermoelectric device

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United States of America Patent

PATENT NO 10886451
APP PUB NO 20190035995A1
SERIAL NO

15536268

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Abstract

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Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY-INDUSTRY FOUNDATION (UIF) YONSEI UNIVERSITY(SINCHON-DONG) YONSEI UNIVERSITY 50 YONSEI-RO SEODAEMUN-GU SEOUL 03722

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chae, Ji Min Seoul, KR 2 0
Cho, Mann Ho Seoul, KR 7 19
Choi, Hye Jin Gyeonggi-do, KR 31 453
Park, Han Bum Seoul, KR 1 0

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