Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
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United States of America Patent
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Jan 5, 2021
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N/A
app pub date -
Apr 15, 2019
filing date -
Jun 12, 2018
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Abstract
A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked. The BPSG film has a boron concentration in a range from 4.5 mol % to 8.0 mol %. The BPSG film has a phosphorus concentration in a range from 1.0 mol % to 3.5 mol %. The NSG film has a thickness in a range from 50 nm to 400 nm. The BPSG film has a thickness in a range from 400 nm to 800 nm. A distance from the gate insulating film to the BPSG film is at most 100 nm at a portion where the gate insulating film and the BPSG film oppose each other across the NSG film.
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