Method for manufacturing bonded wafer
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United States of America Patent
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Jan 5, 2021
Grant Date -
N/A
app pub date -
Feb 27, 2018
filing date -
Apr 25, 2017
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Abstract
A bonded wafer including an ion implantation step using a batch processing ion implanter, wherein the ion implantation step is performed by irradiating a bond wafer with a light element ion beam without forming an insulator film on the bond wafer surface or through an insulator film having a thickness of 50 nm or less formed on the bond wafer surface at an implantation angle inclined from a crystal axis of the bond wafer; and the bond wafer surface is irradiated with the center of the light element ion beam shining at a position on the bond wafer surface shifted from the center of the bond wafer parallel to the center of a rotor by a predetermined amount providing a bonded wafer to prevent degradation of the radial uniformity of ion implantation depth and manufacture a bonded wafer with excellent radial uniformity of thickness of a thin film after delamination.
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