Semiconductor device and method
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United States of America Patent
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Dec 15, 2020
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N/A
app pub date -
Jul 31, 2018
filing date -
Jul 31, 2018
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Abstract
A method for forming a semiconductor device and a semiconductor device formed by the method are disclosed. In an embodiment, the method includes depositing a dummy dielectric layer on a fin extending from a substrate; depositing a dummy gate seed layer on the dummy dielectric layer; reflowing the dummy gate seed layer; etching the dummy gate seed layer; and selectively depositing a dummy gate material over the dummy gate seed layer, the dummy gate material and the dummy gate seed layer constituting a dummy gate.
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