High frequency integrated circuit and emitting device for irradiating the integrated circuit

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United States of America Patent

PATENT NO 10867981
APP PUB NO 20180108641A1
SERIAL NO

15835156

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Abstract

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What is described is a high-frequency integrated circuit provided on a III-V compound semiconductor, wherein an emitting device is radiation-coupled with the integrated circuit such that the emitting device irradiates the integrated circuit, and wherein the integrated circuit has at least one of an oscillator, a mixer, a phase shifter, a frequency divider or an amplifier.

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Patent Owner(s)

Patent OwnerAddress
ADVANTEST CORPORATION1-6-2 MARUNOUCHI CHIYODA-KU TOKYO 100-0005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harjung, Rolf Holzgerlingen, DE 3 12
Rohmann, Peter Stuttgart, DE 1 0

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