Memory device including charge pump circuit

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United States of America Patent

PATENT NO 10867639
SERIAL NO

16502736

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Abstract

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The memory device includes a memory cell array including a plurality of memory cells and a voltage generator configured to supply a voltage to the memory cell array. The voltage generator includes a charge pump circuit, a switching circuit, and a stage controller. The charge pump circuit includes a plurality of pump units and is configured to output a pump voltage and a pump current in accordance with a number of pump units that have received an input voltage among the plurality of pump units. The switching circuit is configured to output the pump voltage. The stage controller is configured to receive an input signal corresponding to the pump current and perform a stage control operation of generating a stage control signal for controlling the number of pump units to be driven.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 REPUBLIC OF KOREA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baek, Se-heon Seoul, KR 7 55
Byeon, Dae-seok Seongnam-si, KR 109 1520
Jang, Ki-chang Yongin-si, KR 6 12
Min, Young-sun Hwaseong-si, KR 29 119

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