Integrated circuit device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10854608
APP PUB NO 20200251472A1
SERIAL NO

16854008

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Importance

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Abstract

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An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

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First Claim

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD416 MAETAN-DONG YEONGTONG-GU SUWON-SI GYEONGGI-DO 442-742

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Jae-yup Yongin-si, KR 24 286
Kim, Il-ryong Seongnam-si, KR 14 97
Kim, Ju-youn Suwon-si, KR 87 1795
Lee, Min-seong Hwaseong-si, KR 4 10
Yeo, Kyoung-hwan Seoul, KR 37 751
Yoon, Ji-hoon Seoul, KR 7 28

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