Spin current magnetization rotational element, magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
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United States of America Patent
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Nov 17, 2020
Grant Date -
Mar 7, 2019
app pub date -
Aug 13, 2018
filing date -
Sep 5, 2017
priority date (Note) -
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Abstract
Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.
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