Semiconductor memory

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United States of America Patent

PATENT NO 10839913
SERIAL NO

16567629

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Abstract

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According to one embodiment, a semiconductor memory includes: a first bit line; a first select transistor having a first terminal connected to the first bit line; a first memory cell connected to a second terminal of the first select transistor; a circuit connected to the first bit line and applying an erase voltage to be applied to the first memory cell to the bit line via the first terminal and the second terminal; and a diode connected to the first bit line and the first circuit.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA MEMORY CORPORATION1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujimura, Susumu Yokohama, JP 23 604
Isobe, Katsuaki Yokohama, JP 67 759
Maejima, Hiroshi Tokyo, JP 246 4455
Morozumi, Naohito Kawasaki, JP 7 18
Shikata, Go Moriya, JP 20 103

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