Through silicon via energy storage devices
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United States of America Patent
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Nov 10, 2020
Grant Date -
Jul 2, 2020
app pub date -
Jan 2, 2019
filing date -
Jan 2, 2019
priority date (Note) -
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status (Latency Note)
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Abstract
A method for forming a semiconductor includes forming at least one trench in a silicon substrate. The at least one trench provides an energy storage device containment feature. An electrical and ionic insulating layer(s) is formed on a top surface of the substrate and sidewalls of the trench. A plurality of vias is formed through a base of the trench. The plurality of vias is filled with a metal material. A trench base current collector at the base of the trench and backside current collector at the backside of the substrate are formed from the metal material. These current collectors enable electric and thermal conductive planarization and device isolation through the substrate. A plurality of energy storage device layers is formed over the trench base current collector, and a topside current collector is formed over the plurality of energy storage device layers. A protective encapsulation layer may then be formed.
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