Substrate processing chamber including multiple gas injection points and dual injector
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United States of America Patent
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Nov 3, 2020
Grant Date -
Jul 13, 2017
app pub date -
Jan 5, 2017
filing date -
Jan 7, 2016
priority date (Note) -
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Abstract
A gas injector for a substrate processing system includes a first injector housing including a base portion defining a first gas flow channel; a projecting portion extending from the base portion; and a second gas flow channel extending through the base portion and the projecting portion. The gas injector includes a second injector housing including a first cavity including a first opening, a second opening and a first plurality of gas through holes arranged around the second opening. The first gas flow channel communicates with the first plurality of gas through holes. The second injector housing includes a second cavity that includes a second plurality of gas through holes and that extends from the second opening of the first cavity. The second gas flow channel communicates with the second plurality of gas through holes. Gas in the first and second gas flow channels flows into a processing chamber without mixing.
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