Charge stripping film for ion beam

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United States of America Patent

PATENT NO 10825572
APP PUB NO 20190159330A1
SERIAL NO

16257523

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Abstract

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A charge stripping method includes irradiating a charge stripping film with an ion beam. The charge stripping film includes a single layer body of a graphitic film having a carbon component of at least 96 at % and a thermal conductivity in a film surface direction at 25° C. of at least 800 W/mK, or a laminated body of the graphitic film. The charge stripping film has a thickness of not less than 100 nm and less than 10 μm, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of not more than 1×10−5/K, and an area of at least 4 cm2.

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Patent Owner(s)

Patent OwnerAddress
KANEKA CORPORATIONOSAKA JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Murakami, Mutsuaki Osaka, JP 88 993
Tachibana, Masamitsu Osaka, JP 25 121
Tatami, Atsushi Osaka, JP 18 70

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