Silicon photonics using off-cut wafer having top-side vertical outcoupler from etched cavity
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United States of America Patent
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Nov 3, 2020
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N/A
app pub date -
Sep 25, 2019
filing date -
Sep 27, 2018
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Abstract
Described herein is a top-side vertical outcoupler for use in an integrated photonics device. The integrated photonics device can include a photonics circuit, where light can propagate through waveguide(s) to outcoupler(s). The outcoupler(s) can redirect the light to optics, which can then collimate, focus, and/or direct the light to a launch region located on an external surface of the device. The integrated photonics device can include a plurality of layers deposited on a supporting layer. The plurality of layers can be used to form the waveguide(s) and the outcoupler(s). By forming the outcoupler(s) of the same material as the waveguide(s), the amount of light that is lost can be reduced or minimized. Additionally, the reduced number of interfaces that the light has to pass through to reach the outcoupler(s) can allow for better control of the divergence angles of the emitted light.
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