Method for producing aluminum nitride single crystal substrate
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United States of America Patent
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Nov 3, 2020
Grant Date -
Mar 28, 2019
app pub date -
Mar 22, 2017
filing date -
Mar 23, 2016
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Abstract
A method for producing an AlN single crystal substrate, the method including: i) preparing a first base substrate consisting of a first AlN single crystal; ii) growing a first AlN single crystal layer over a main face of the first base substrate, to obtain a layered body; iii) cutting the first MN single crystal layer of the layered body, to separate the layered body into a second base substrate and a first part of the first AlN single crystal layer, the second base substrate including the first base substrate and a thin film layered thereon, the thin film being a second part of the first AlN single crystal layer; iv) polishing a surface of the thin film, to obtain a third base substrate consisting of a second AlN single crystal; and v) growing a second AlN single crystal layer over the polished surface of the third base substrate.
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