Method for limiting growth of KDP-type crystals with a long seed

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United States of America Patent

PATENT NO 10822715
APP PUB NO 20190136403A1
SERIAL NO

16218291

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Abstract

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Method for limiting growth of KDP-type crystals with a long seed where an upper and a lower ends of the long seed crystal are respectively limited by an upper baffle plate and a lower tray to restrain growth of a pyramidal surface and allow only four prismatic surfaces in [100] and [010] directions to grow. Finally grown crystal contains no pyramid-prism interface that severely restricts quality of optical element, and all cut optical elements have high optical quality. As four prismatic surfaces are subjected to highly similar growing environment and grow simultaneously, all optical elements cut therefrom have high optical uniformity. Due to uniqueness of a cutting angle of a KDP crystal frequency-tripled element, high cutting efficiency is achieved in the element, and an area of a maximum frequency-tripled element that may be cut is known in advance according to a horizontal size of the grown crystal.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS CHINESE ACADEMY OF SCIENCES201800 SHANGHAI JIADING 800-211 POST BOX SHANGHAI CITY SHANGHAI CITY 201800

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Duanyang Shanghai, CN 12 1
Qi, Hongji Shanghai, CN 11 1
Shao, Jianda Shanghai, CN 7 3
Wang, Bin Shanghai, CN 1095 9516
Wang, Hu Shanghai, CN 70 222
Xie, Xiaoyi Shanghai, CN 10 175

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