Boron segregation in magnetic tunnel junctions
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United States of America Patent
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Oct 13, 2020
Grant Date -
May 9, 2019
app pub date -
Jan 8, 2019
filing date -
Mar 21, 2017
priority date (Note) -
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Abstract
Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a free magnetic layer formed on the tunnel barrier layer. A first boron-segregating layer is formed directly on the free magnetic layer. An anneal is performed to cause boron to leave the free magnetic layer at an interface with the first boron-segregating layer. A top electrode is formed over the memory stack.
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