Photodetector and method for fabricating the same
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United States of America Patent
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Jul 23, 2020
Grant Date -
Jul 23, 2020
app pub date -
Feb 25, 2019
filing date -
Jan 17, 2019
priority date (Note) -
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Abstract
A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.
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