Integrated circuit device
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United States of America Patent
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Oct 13, 2020
Grant Date -
Oct 17, 2019
app pub date -
Oct 25, 2018
filing date -
Apr 11, 2018
priority date (Note) -
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Abstract
An integrated circuit device includes a substrate from which a plurality of fin-type active regions protrude, the plurality of fin-type active regions extending in parallel to one another in a first direction, and a plurality of gate structures and a plurality of fin-isolation insulating portions extending on the substrate in a second direction crossing the first direction and at a constant pitch in the first direction, wherein a pair of fin-isolation insulating portions from among the plurality of fin-isolation insulating portions are between a pair of gate structures from among the plurality of gate structures, and the plurality of fin-type active regions include a plurality of first fin-type regions and a plurality of second fin-type regions.
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